1 / 7 asb inc. sales@asb .co.kr tel: +82 - 42 - 528 - 7223 february 20 10 as w215 5 - 40 00 mhz mmic amplifier parameters units typical frequency mhz 900 2000 3500 gain db 16 12 10 s11 db - 18 - 15 - 18 s22 db - 18 - 18 - 18 output ip3 1) dbm 37 35 28 noise figure db 3.8 4.3 4.8 output p1db dbm 19 19 16 current ma 83 83 83 device voltage v 5 5 5 1) oip3 is measured with two tones at an output power of +3 dbm/tone separated by 1 mhz. parameters units min typ max testing frequency mhz 900 gain db 15 16 s11 db - 18 s22 db - 18 output ip3 dbm 35 37 noise figure db 3.8 4.0 output p1db dbm 18 19 current ma 78 83 90 device voltage v 5 parameters rating operating case temperature - 40 to + 85 c storage temperature - 40 to + 150 c device voltage +6 v operating junction temper a ture + 150 c input rf power ( cw, 50o hm matched)* 25 dbm * please find the max. input power data from http://www.asb.co.kr/pdf/maximum_input_power_analysis.pdf feature s description typical perfor m ance absolute maximum ratings 16 db gain at 900 mhz 19 dbm p1db at 900 mhz 37 dbm output ip3 at 900 mhz 3.8 db nf at 900 mhz mttf > 100 years s ingle supply the ASW215, a power amplifier mmic, has a high linearity , high gain, and high efficiency over a wide range of frequency, being sui t able for use in both receiver and transmitter of telecommunicati on sy s- tems up to 4 ghz. the amplifier is available in a n sot - 89 package and passes through the stringent dc, rf, and reliability tests. product specifications ASW215 package style: sot - 89 application circuit 5 ~ 42 mhz if 500 ~ 3500 mhz pin configuration pin no. function 1 rf in 2 gnd 3 rf out / bias
2 / 7 asb inc. sales@asb .co.kr tel: +82 - 42 - 528 - 7223 february 20 10 as w215 5 - 40 00 mhz mmic amplifier pin no. function 1 rf in 2 gn d 3 rf out / bias mounting recommendation (in mm) outline drawing note : 1. the number and size of ground via ho les in a circuit board is critical for thermal and rf grounding consi d erations. 2. we recommend that the ground via holes be placed on the bottom of the lead pin 2 and exposed pad of the device for better rf and thermal performance, as shown in the drawing at the left side. esd classification hbm class 1b voltage level: 500 v~1000 v mm class a voltage level: <200 v caution: esd - sensitive device! moisture sensitivity level (msl) level 3 at 260 c reflow esd classification & moisture sensitivity level symbols dimensions (in mm) min nom max a 1.40 1.50 1.60 l 0.89 1.04 1.20 b 0.36 0.42 0.48 b1 0.41 0.47 0.53 c 0.38 0.40 0.43 d 4.40 4.50 4.60 d1 1.40 1.60 1.75 e 3.64 --- 4.25 e1 2.40 2.50 2.60 e1 2.90 3.00 3.10 h 0.35 0.40 0.45 s 0.65 0.75 0.85 e 1.40 1.50 1.60 as w215 pxxxx lot no. part no.
3 / 7 asb inc. sales@asb .co.kr tel: +82 - 42 - 528 - 7223 february 20 10 as w215 5 - 40 00 mhz mmic amplifier 1) oip3 is measured with two tones at an output power of +3 dbm/tone separated by 1 mhz. board layout ( fr4, 40x40 mm 2 , 0.8t) schematic s - parameters & k - fa ctor application circuit frequency (mhz) 5 42 magnitude s21 (db) 18.5 18.5 magnitude s11 (db) - 14 - 16 magnitude s22 (db) - 11 - 14 output p1db (dbm) 19 19 output ip3 1) (dbm) 37 37 noise figure (db) 3.4 3.4 device voltage (v) 5 5 current (ma) 83 83 5 ~ 42 mhz +5 v 0 500 1000 1500 2000 2500 3000 3500 0 1 2 3 4 5 stability factor frequency (mhz) rf in rf out c3=100 pf c4=1 m f ASW215 d1=5.6v zener diode vcc=5 v c1=1 m f c2=1 m f l1=4.7 h (coil inductor) m 0 50 100 150 200 250 300 0 5 10 15 20 25 gain (db) frequency (mhz) 0 50 100 150 200 250 300 -25 -20 -15 -10 -5 0 s11 (db) frequency (mhz) 0 50 100 150 200 250 300 -20 -15 -10 -5 0 s22 (db) frequency (mhz)
4 / 7 asb inc. sales@asb .co.kr tel: +82 - 42 - 528 - 7223 february 20 10 as w215 5 - 40 00 mhz mmic amplifier 1) oip3 is measured with two tones at an output power of +5 dbm/tone separated by 1 mhz. board layout ( fr4, 40x40 mm 2 , 0.8t) schematic s - parameters & k - factor application circuit frequency (mhz) 70 150 300 450 magnitude s21 (db) 18.5 18.5 18 17.5 magnitude s11 (db) - 15 - 15 - 18 - 18 magnitude s22 (db ) - 14 - 14 - 14 - 13.5 output p1db (dbm) 19 19 19 19 output ip3 1) (dbm) 37.5 38 38 38 noise figure (db) 3.5 3.5 4.3 3.5 device voltage (v) 5 5 5 5 current (ma) 83 83 83 83 if 70 ~ 450 mhz +5 v 100 200 300 400 500 0 5 10 15 20 25 gain (db) frequency (mhz) 100 200 300 400 500 -25 -20 -15 -10 -5 0 s11 (db) frequency (mhz) 100 200 300 400 500 -25 -20 -15 -10 -5 0 s22 (db) frequency (mhz) 0 500 1000 1500 2000 2500 3000 3500 0 1 2 3 4 5 stability factor frequency (mhz) c1=1000 pf l1=680 nh c2=1000 pf rf in rf out c3=100 pf c4=1 m f ASW215 d1=5.6v zener diode vcc=5 v r1=1 w
5 / 7 asb inc. sales@asb .co.kr tel: +82 - 42 - 528 - 7223 february 20 10 as w215 5 - 40 00 mhz mmic amplifier 1) oip3 is measured with two tones at an output power of +3 dbm/tone separated by 1 mhz. board layout ( fr4, 40x40 mm 2 , 0.8t) schematic s - parameters & k - factor application c ircuit 500 ~ 3500 mhz +5 v frequency (mhz) 500 900 1750 2000 2400 2700 3500 magnitude s21 (db) 17 16 13 12 11.5 11 10 magnitude s11 (db) - 12 - 18 - 18 - 15 - 15 - 15 - 18 magnitude s22 (db) - 18 - 18 - 18 - 18 - 18 - 18 - 18 output p1db (dbm) 19 19 19 19 18 17 16 output ip3 1) (dbm) 37 37 35 35 33 32 28 noise figure (db) 3.8 3.8 4.0 4.3 4.3 4.5 4.8 device voltage (v) 5 current (ma) 83 0 500 1000 1500 2000 2500 3000 3500 4000 0 1 2 3 4 5 stability factor frequency (mhz) 0 500 1000 1500 2000 2500 3000 3500 4000 0 5 10 15 20 25 gain (db) frequency (mhz) -40 o c 25 o c 85 o c 0 500 1000 1500 2000 2500 3000 3500 4000 -30 -25 -20 -15 -10 -5 0 s11 (db) frequency (mhz) -40 o c 25 o c 85 o c 0 500 1000 1500 2000 2500 3000 3500 4000 -30 -25 -20 -15 -10 -5 0 s22 (db) frequency (mhz) -40 o c 25 o c 85 o c c1=100 pf l1=33 nh c2=100 pf rf in rf out c3=100 pf c4=1 m f ASW215 d1=5.6v zener diode vcc=5 v r1=1 w
6 / 7 asb inc. sales@asb .co.kr tel: +82 - 42 - 528 - 7223 february 20 10 as w215 5 - 40 00 mhz mmic amplifier -60 -40 -20 0 20 40 60 80 100 20 40 60 80 100 120 140 current (ma) temperature ( o c) p1db vs. frequency current vs. temperature output ip3 vs. tone power (frequency = 2000mhz) output ip3 vs. frequency gain vs. temperature -60 -40 -20 0 20 40 60 80 100 13 14 15 16 17 18 gain (db) temperature ( o c) frequency = 900 mhz 0 500 1000 1500 2000 2500 3000 3500 4000 12 14 16 18 20 22 24 p1db (dbm) frequency (mhz) -40 o c 25 o c 85 o c 0 500 1000 1500 2000 2500 3000 28 30 32 34 36 38 40 42 output ip3 (dbm) frequency (mhz) -40 o c 25 o c 85 o c -2 0 2 4 6 8 10 12 14 16 15 20 25 30 35 40 45 output ip3 (dbm) p out per tone (dbm) -40 o c 25 o c 85 o c
7 / 7 asb inc. sales@asb .co.kr tel: +82 - 42 - 528 - 7223 february 20 10 as w215 5 - 40 00 mhz mmic amplifier 1) oip3 is measured with two tones at an output power of +0 dbm/tone separated by 1 mhz. perfor m ance with varying v device v d e vice (v) cu r rent (ma) freq. (mhz) gain (db) s11 (db) s22 (db) oip3 1) (db m ) p1 db (dbm) nf (db) 4.9 85 900 16 - 16.6 - 23.8 37.3 19.2 3.5 200 0 12.8 - 18.8 - 17.3 34.7 18.6 4.06 3500 10.5 - 17.9 - 22.5 30.4 16.8 -- 4.7 69 900 15.9 - 16.2 - 23 34.8 18.2 3.57 2000 12.7 - 19.8 - 17.2 33.4 17.8 3.96 3500 10.4 - 17.3 - 21.8 29.7 16 -- 4.55 52 900 15.7 - 15.7 - 21.8 30 15.2 3.46 2000 12.6 - 21.2 - 17. 3 30 16.3 3.8 3500 10.3 - 16.6 - 22.4 28 14.5 -- 4.4 37 900 15.1 - 14.3 - 18.6 21 9 3.37 2000 12.2 - 25.7 - 17.1 21.8 11.2 3.62 3500 10 - 15.2 - 21.9 22.6 12 --
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